PART |
Description |
Maker |
AM29DL323GB70WMI AM29DL322GT70WMI AM29DL322GT90EI |
32 megabit CMOS 3.0 volt-only, simultaneous operation flash memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 IC Flash Mem PARL 2.7v To 3.6v 32-MBit 2M x 16/4mx8 70ns 48FBGA 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 IC,MEM,FLASH,2MX16,3V,90NS,SIMUL 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V 512Mb/256Mb 1.8V NAND Flash Errata 64M x 8 bit NAND flash memory, 1.70 - 1.95V 32M x 16 bit NAND flash memory, 2.7 - 3.6V 32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory 512K x 8 bit NAND Flash Memory
|
Samsung semiconductor Samsung Electronic
|
CY7C68023-56LTXC |
EZ-USB NX2LP USB 2.0 NAND Flash Controller 3.3 V NAND Flash Operation
|
Cypress Semiconductor
|
HY27UF082G2A HY27UF162G2A HY27UF082G2A-TCB HY27UF0 |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash 256M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM-MPEB |
16Gbit (2Gx8bit) NAND Flash 2G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 1 MM HEIGHT, LEAD FREE, TLGA-52
|
Hynix Semiconductor, Inc.
|
K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F400 |
512K x 8 bit NAND Flash Memory 4M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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